2cl20 0kv/ 1 a 3 .0 a 20 0 kv potting t ype h igh v oltage r ectifier s ubassembly ----------------------------------------------------------------------------------------------------------------------------- ------ gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 7 - 10 1 / 2 introduce : hvgt high voltage silicon rectifier assembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. f eatures: 1. high reliability design . 2. high voltage design . 3. high c urrent . 4. conform to rohs and sgs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. h igh voltage multiplier circuit 2. high voltage test equipment circuit . 3. g eneral purpose high voltage rectifier. 4. environmental desulfurization system . mechanical data: 1. case : epoxy resin molding. 2. terminal: s crew h oles . 3. net weight : 1050 grams (approx) . shape display: s ize: (unit:mm) hvgt name : hv c - 289030 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm t a = 2 5c 200 kv non - repetitive peak renerse voltage v r s m t a = 2 5c 240 kv average forward current maximum i favm t a = 25 c 3 .0 a t oil = 5 5c -- a non - repetitive forward surge current i fsm t a =25c ; 6 0 hz h alf - s ine w ave ; 8.3 ms 60 a junction temperature t j 125 c allowable operation case temperature tc - 40~+ 1 25 c storage temperature t stg - 40 ~ + 1 50 c electrical characteristics: t a =25c ( unless o therwise s pecified ) items symbols condition data value units maximum forward voltage drop v f m at 25c ; at i favm 240 v maximum reverse current i r1 at 25c ; at v rrm 5.0 ua i r2 at 1 00 c ; at v rrm 50 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r -- ns junction capacitance c j at 25c ; v r =0v ; f=1mhz -- pf
2cl20 0kv/ 1 a 3 .0 a 20 0 kv potting t ype h igh v oltage r ectifier s ubassembly ----------------------------------------------------------------------------------------------------------------------------- ------ gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 7 - 10 2 / 2 fig 1 forward current derating curve fig 2 non - repetitive surge current cycles ( 6 0hz) marking type code cathode mark 2cl 200 kv/ 3 a 2cl 20 0kv/ 3 a hvgt
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